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ICE7N60 - N-Channel MOSFET

ICE7N60 Description

Preliminary Data Sheet ICE7N60 ICE7N60 N-Channel Enhancement Mode MOSFET .

ICE7N60 Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems H

ICE7N60 Applications

* in process in the USA and the above listed countries. SP-7N60-000-3 05/15/2013 8 Preliminary Data Sheet ICE7N60 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house YYWW

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Datasheet Details

Part number
ICE7N60
Manufacturer
Icemos
File Size
553.26 KB
Datasheet
ICE7N60-Icemos
Description
N-Channel MOSFET

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