2N3866 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Planar Epitaxial Overlay Transistor 2N3866 .
High Gain Bandwidth Product fT= 500 MHz (Min. Low Collector Capacitance; CC = 3 pF Max.

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Datasheet Specifications

Part number: 2N3866
Manufacturer: Inchange Semiconductor
File Size: 194.36 KB
Datasheet: 2N3866-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in output, driver or pre-driver stages in VHF and UHF equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCER Collector-Emitter Voltage RBE= 10Ω 55 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Volt

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2N3866 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2N3866-like datasheet