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2N6609 - Silicon PNP Power Transistor

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Datasheet Details

Part number 2N6609
Manufacturer Inchange Semiconductor
File Size 137.67 KB
Description Silicon PNP Power Transistor
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2N6609 Product details

Description

Excellent Safe Operating Area High DC Current Gain-hFE=15(Min)@IC = -8A Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A Complement to Type 2N3773 APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V

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