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2N6609

Silicon PNP Power Transistor

2N6609 General Description


*Excellent Safe Operating Area
*High DC Current Gain-hFE=15(Min)@IC = -8A
*Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A
*Complement to Type 2N3773 APPLICATIONS
*Designed for high power audio ,disk head positioners and other linear applications, which can also be used.

2N6609 Datasheet (137.67 KB)

Preview of 2N6609 PDF

Datasheet Details

Part number:

2N6609

Manufacturer:

Inchange Semiconductor

File Size:

137.67 KB

Description:

Silicon pnp power transistor.

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2N6609 Silicon PNP Power Transistor Inchange Semiconductor

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