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2N6609 Silicon PNP Power Transistor

2N6609 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 .
Excellent Safe Operating Area. High DC Current Gain-hFE=15(Min)@IC = -8A. Low Saturation Voltage- : VCE(sat)= -1. C.

2N6609 Applications

* Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag

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Datasheet Details

Part number
2N6609
Manufacturer
Inchange Semiconductor
File Size
137.67 KB
Datasheet
2N6609-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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