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2N6609 Datasheet - Inchange Semiconductor

2N6609 Silicon PNP Power Transistor

*Excellent Safe Operating Area *High DC Current Gain-hFE=15(Min)@IC = -8A *Low Saturation Voltage- : VCE(sat)= -1.4V(Max)@ IC = -8A *Complement to Type 2N3773 APPLICATIONS *Designed for high power audio ,disk head positioners and other linear applications, which can also be used.

2N6609-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2N6609

Manufacturer:

Inchange Semiconductor

File Size:

137.67 KB

Description:

Silicon pnp power transistor.

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2N6609 2N6609 Silicon PNP Power Transistor Inchange Semiconductor

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