Datasheet4U Logo Datasheet4U.com

2N6668 Datasheet - Inchange Semiconductor

Silicon PNP Power Transistor

2N6668 General Description

*High DC Current Gain- : hFE = 1000(Min)@ IC= -5A *Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A *Complement to Type 2N6388 APPLICATIONS *Designed for general purpose amplifier and low sp.

2N6668 Datasheet (144.52 KB)

Preview of 2N6668 PDF

Datasheet Details

Part number:

2N6668

Manufacturer:

Inchange Semiconductor

File Size:

144.52 KB

Description:

Silicon pnp power transistor.

📁 Related Datasheet

2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs (Supertex Inc)

2N6660 TMOS SWITCHING FET TRANSISTORS (Motorola Inc)

2N6660 N-Channel Enhancement Mode Power MOSFET (TT)

2N6660 N-Channel Power MOSFET (VPT)

2N6660 N-Channel MOSFET (Vishay Siliconix)

2N6660 N-Channel Enhancement-Mode Vertical DMOS FET (Microchip)

2N6660 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)

2N6660-2 N-Channel MOSFET (Vishay Siliconix)

2N6660JAN N-Channel MOSFET (Vishay)

2N6660JANTX N-Channel MOSFET (Vishay Siliconix)

TAGS

2N6668 Silicon PNP Power Transistor Inchange Semiconductor

Image Gallery

2N6668 Datasheet Preview Page 2

2N6668 Distributor