2N6666 Datasheet, Transistor, Inchange Semiconductor

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2N6666

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon pnp darlington power transistor.

High DC Current Gain- : hFE = 1000(Min)@ IC= -3A

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)

2N6666 Application

• Applications
• Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAM

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2N6666

Inchange Semiconductor

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