Datasheet Details
| Part number | 2N6666 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.43 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet |
 2N6666-InchangeSemiconductor.pdf
|
| Part number | 2N6666 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.43 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet |
2N6666-InchangeSemiconductor.pdf
|
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A Complement to Type 2N6386 APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage
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