2N6666 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min). Low Collector-Emitter Sa.

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Datasheet Specifications

Part number: 2N6666
Manufacturer: Inchange Semiconductor
File Size: 82.43 KB
Datasheet: 2N6666-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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2N6666 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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