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2N6667 - Silicon PNP Power Transistor

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Datasheet Details

Part number 2N6667
Manufacturer Inchange Semiconductor
File Size 144.47 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2N6667-InchangeSemiconductor.pdf

2N6667 Product details

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A Complement to Type 2N6387 APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage

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