2N6667 Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6667 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min). Low Collector-Emitter Sa.

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Datasheet Specifications

Part number: 2N6667
Manufacturer: Inchange Semiconductor
File Size: 144.47 KB
Datasheet: 2N6667-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A

2N6667 Distributors

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2N6667 Silicon PNP Power Transistor Inchange Semiconductor

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