2SA1444 Datasheet - Inchange Semiconductor

2SA1444 Silicon PNP Power Transistor

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) *High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) *Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC.

2SA1444 Features

* a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Curre

2SA1444-InchangeSemiconductor.pdf