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2SA1658 POWER TRANSISTOR

2SA1658 Description

isc Silicon PNP Power Transistor 2SA1658 .
Collector-Emitter Breakdown Voltage VCEO= -30V(Min). Complement to Type 2SC4369. Full-mold package that does not require an insulating bo.

2SA1658 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous

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