2SA1788 Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1788 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SA1788
Manufacturer: Inchange Semiconductor
File Size: 198.16 KB
Datasheet: 2SA1788_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissip

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2SA1788 Power Transistor Inchange Semiconductor

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