2SA1789 Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1789 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device per.

📥 Download Datasheet

2SA1789 Datasheet Preview — Preview of 2SA1789 PDF

Datasheet Specifications

Part number: 2SA1789
Manufacturer: Inchange Semiconductor
File Size: 198.42 KB
Datasheet: 2SA1789_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipat

2SA1789 Distributors

📁 Related Datasheet

2SA1780 2SA1781 2SA1782 2SA1783 2SA1784 2SA1785

📌 All Tags

2SA1789 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SA1789-like datasheet