2SA814 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA814 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -120(V)(Min. Complement to Type 2SC1624. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2SA814
Manufacturer: Inchange Semiconductor
File Size: 207.12 KB
Datasheet: 2SA814_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Medium power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1

2SA814 Distributors

📁 Related Datasheet

2SA811A 2SA812 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7

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2SA814 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA814-like datasheet