2SA818 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min). Good Linearity of hFE. Complement to Type 2SC1628 APPLICATIONS. Power am.

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Datasheet Specifications

Part number: 2SA818
Manufacturer: Inchange Semiconductor
File Size: 142.74 KB
Datasheet: 2SA818-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Power amplifier applications
* Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Po

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2SA818 Silicon PNP Power Transistors Inchange Semiconductor

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