2SA839 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA839 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min). DC Current Gain : hFE= 40-240@ IC= -0. Complement to Type 2SC1669. Min.

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Datasheet Specifications

Part number: 2SA839
Manufacturer: Inchange Semiconductor
File Size: 205.86 KB
Datasheet: 2SA839_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Audio power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.

2SA839 Distributors

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2SA839 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA839-like datasheet