2SA882 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA882 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: 2SA882
Manufacturer: Inchange Semiconductor
File Size: 192.97 KB
Datasheet: 2SA882_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for power and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation

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2SA882 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA882-like datasheet