2SA815 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA815 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= -100(V)(Min. Complement to Type 2SC1625. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2SA815
Manufacturer: Inchange Semiconductor
File Size: 204.77 KB
Datasheet: 2SA815_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Medium power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1

2SA815 Distributors

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2SA815 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA815-like datasheet