Datasheet4U Logo Datasheet4U.com

2SA815

POWER TRANSISTOR

2SA815 General Description


*Collector-Emitter Breakdown Voltage- :V(BR)CEO= -100(V)(Min.)
*Complement to Type 2SC1625
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Medium power amplifier applications.
*Driver stage amplifier applications. ABSOLUTE MAXIMU.

2SA815 Datasheet (204.77 KB)

Preview of 2SA815 PDF

Datasheet Details

Part number:

2SA815

Manufacturer:

Inchange Semiconductor

File Size:

204.77 KB

Description:

Power transistor.

📁 Related Datasheet

2SA811A - PNP SILICON TRANSISTOR (NEC)
.

2SA812 - PNP Transistor (NEC)
DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE =.

2SA812 - PNP Transistor (WEITRON)
PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Vo.

2SA812 - SOT-23 BIPOLAR TRANSISTORS (Rectron)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA812 FEATURES * Power dissipation PCM : 0.2 W(Tamb=25O.

2SA812 - PNP Transistor (HOTTECH)
Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812.

2SA812 - PNP Transistors (Kexin)
SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V .

2SA812 - PNP Transistor (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623.

2SA812 - PNP Transistor (DC COMPONENTS)
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA812 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio.

TAGS

2SA815 POWER TRANSISTOR Inchange Semiconductor

Image Gallery

2SA815 Datasheet Preview Page 2

2SA815 Distributor