2SA807 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Power Dissipation- : PC= 50W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SA807
Manufacturer: Inchange Semiconductor
File Size: 195.95 KB
Datasheet: 2SA807_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC

2SA807 Distributors

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2SA807 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA807-like datasheet