2SA807
Inchange Semiconductor
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Power transistor. *High Power Dissipation- : PC= 50W(Max.)@TC=25℃ *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) *Minimum Lot-to-Lot vari
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2SA807 - Silicon POwer Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA807
DESCRIPTION ·With TO-3 package ·Wide area of.
2SA808 - Silicon POwer Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA808
DESCRIPTION ·With TO-3 package ·Wide area of.
2SA808 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SA808
DESCRIPTION ·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO.
2SA811A - PNP SILICON TRANSISTOR
(NEC)
.
2SA812 - PNP Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =.
2SA812 - PNP Transistor
(WEITRON)
PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo.
2SA812 - SOT-23 BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O.
2SA812 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812.
2SA812 - PNP Transistors
(Kexin)
SMD Type
Transistors
PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
.
2SA812 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623.
