2SB897 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor 2SB897 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -10A. Low Collector Saturation Voltage- : VCE(sat) = -1. Complement to Typ.

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Datasheet Specifications

Part number: 2SB897
Manufacturer: Inchange Semiconductor
File Size: 216.77 KB
Datasheet: 2SB897-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Cu

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2SB897 Silicon PNP Power Transistor Inchange Semiconductor

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