2SB899 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB899 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. 100% avala.

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Datasheet Specifications

Part number: 2SB899
Manufacturer: INCHANGE
File Size: 180.56 KB
Datasheet: 2SB899-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A

2SB899 Distributors

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2SB899 PNP Transistor INCHANGE

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