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2SC5352 Silicon NPN Power Transistor

2SC5352 Description

isc Silicon NPN Power Transistor 2SC5352 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

2SC5352 Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Coll

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Datasheet Details

Part number
2SC5352
Manufacturer
Inchange Semiconductor
File Size
216.71 KB
Datasheet
2SC5352_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC5352-like datasheet