2SCR542D - Silicon NPN Power Transistors

Inchange Semiconductor

2SCR542D Datasheet Preview — Preview of 2SCR542D PDF

Datasheet Details

Part number	2SCR542D
Manufacturer	Inchange Semiconductor
File Size	264.13 KB
Description	Silicon NPN Power Transistors
Datasheet	2SCR542D-InchangeSemiconductor.pdf

2SCR542D Product details

Description

DC Current Gain hFE :200-500@ IC= 0.5A Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous

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Published: Jul 3, 2022 |