2SCR542D Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
DC Current Gain hFE :200-500@ IC= 0. Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min). Minimum Lot-to-Lot variations for robu.

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Datasheet Specifications

Part number: 2SCR542D
Manufacturer: Inchange Semiconductor
File Size: 264.13 KB
Datasheet: 2SCR542D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 5.0 A I

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2SCR542D Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SCR542D-like datasheet