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2SCR542D

Silicon NPN Power Transistors

2SCR542D General Description


*DC Current Gain hFE :200-500@ IC= 0.5A
*Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in general purpose amplifier and switching applications. ABSOLUTE MA.

2SCR542D Datasheet (264.13 KB)

Preview of 2SCR542D PDF

Datasheet Details

Part number:

2SCR542D

Manufacturer:

Inchange Semiconductor

File Size:

264.13 KB

Description:

Silicon npn power transistors.

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2SCR542D Silicon NPN Power Transistors Inchange Semiconductor

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