2SK1933 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK1933

Manufacturer:

Inchange Semiconductor

File Size:

223.44kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Drain Current   –ID=10A@ TC=25℃

Drain Source Voltage- : VDSS= 900V(Min)

Fast Switching Speed

2SK1933 Application

• Applications
• Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VG

TAGS

2SK1933

Inchange Semiconductor

📁 Related Datasheet

2SK193 - N-Channel FET (NEC)
.

2SK1930 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio.

2SK1931 - VR Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is s.

2SK1933 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakd.

2SK1933 - Silicon N Channel MOS FET (Renesas)
2SK1933 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown .

2SK1934 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakd.

2SK1936 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.

2SK1936-01 - N-channel MOS-FET (Fuji Electric)
2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ±.

2SK1937 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.

2SK1937-01 - N-channel MOS-FET (Fuji Electric)
2SK1937-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.