Part number:
40N10
Manufacturer:
Inchange Semiconductor
File Size:
219.35 KB
Description:
N-channel mosfet transistor.
* Drain Current ID= 40A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switching power supplies,c
40N10
Inchange Semiconductor
219.35 KB
N-channel mosfet transistor.
📁 Related Datasheet
40N10 - N-Channel MOSFET
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PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.030 at VGS = .
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FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
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PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 .
40N10B - N-CHANNEL MOSFET
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FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
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FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
40N10F7 - N-channel Power MOSFET
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STL40N10F7
N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal s.
40N10H - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
40N120 - IXEH40N120
(IXYS Corporation)
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C.
