BU134 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min. Collector Saturation Voltage- : VCE(sat)= 1. High Speed Swi.

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Datasheet Specifications

Part number: BU134
Manufacturer: Inchange Semiconductor
File Size: 206.99 KB
Datasheet: BU134_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in color TV receiver’s chopper supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 4 A ICM Collector Curr

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BU134 Silicon NPN Power Transistor Inchange Semiconductor

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