BU2532AW Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU2532AW .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perf.

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Datasheet Specifications

Part number: BU2532AW
Manufacturer: Inchange Semiconductor
File Size: 214.79 KB
Datasheet: BU2532AW-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector- Emitter Voltage(VBE= 0) 1500 VCEO Collector-Emitter Voltage 800 UNIT V V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-

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BU2532AW Silicon NPN Power Transistor Inchange Semiconductor

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