BU2527AW Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number: BU2527AW
Manufacturer: Inchange Semiconductor
File Size: 215.01 KB
Datasheet: BU2527AW-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continu

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BU2527AW Silicon NPN Power Transistor Inchange Semiconductor

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