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BU2527A Silicon Diffused Power Transistor

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Description

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL .
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high res.

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Datasheet Specifications

Part number
BU2527A
Manufacturer
Philips
File Size
54.67 KB
Datasheet
BU2527A_Philips.pdf
Description
Silicon Diffused Power Transistor

Features

* improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation

Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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