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BU2527DF Silicon Diffused Power Transistor

BU2527DF Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL .
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in hor.

BU2527DF Features

* improved RBSOA performance. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collec

BU2527DF Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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