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BU2527AF Silicon Diffused Power Transistor

BU2527AF Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL .
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits o.

BU2527AF Features

* improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation

BU2527AF Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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