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C3783 Silicon NPN Power Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3783 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed APPLICATIONS. High speed and high voltage switchin.

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Datasheet Specifications

Part number
C3783
Manufacturer
Inchange Semiconductor
File Size
198.54 KB
Datasheet
C3783-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* High speed and high voltage switching applications.
* Switching regulator applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-

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