* High fT (fT typ=400MHz).
* High breakdown voltage (VCEO≥200V).
* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.1pF (NPN), 2.6pF (PNP).
* Complementary PNP and NPN types.
* Adoption of FBET process. ( ) : 2SA1476 JEDEC : TO-220AB EIAJ : S
C3782
Sanyo Semicon Device
45.70 KB
2sc3782.
Ordering number:EN2528A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1476/2SC3782 Ultrahigh-Definition CRT Display Video Output Applications Appl.
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