C3788 Datasheet - Sanyo Semicon Device

PNP/NPN Epitaxial Planar Silicon Transistors

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP).

* Adoption of FBET process. Package Dimensions unit:mm 2042A [2SA1478/2SC3788] ( ) : 2SA1478 Specifications Absolute Maximum Ratings a

C3788

Sanyo Semicon Device

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Pnp/npn epitaxial planar silicon transistors.

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