IRFP442R - N-Channel MOSFET Transistor

Inchange Semiconductor

IRFP442R Datasheet Preview — Preview of IRFP442R PDF

Datasheet Details

Part number	IRFP442R
Manufacturer	Inchange Semiconductor
File Size	236.95 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFP442R-InchangeSemiconductor.pdf

IRFP442R Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 7 A 28 A 125 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID= 7A@ TC=25℃.
Drain Source Voltage- : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Aug 8, 2016 |