IRFP440PBF Datasheet, mosfet equivalent, International Rectifier

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IRFP440 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFP440 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFP440A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance.

IRFP440B - 500V N-Channel MOSFET (Fairchild Semiconductor)
IRFP440B November 2001 IRFP440B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

IRFP440R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :.

IRFP4410Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFP4410Z，IIRFP4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 .

IRFP4410ZPBF - Power MOSFET (International Rectifier)
PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High .

IRFP441R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance :.

IRFP442R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :.

IRFP443R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance :.

IRFP4468 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468，IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement m.