IRFP4410ZPBF - Power MOSFET
PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS R D S (o n ) typ.
max.
ID (Silicon Limited) 100V 7.2m: 9.0m: 97A DD G G Gate S D G TO-247AC S
IRFP4410ZPBF Features
* unts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 50 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav
* f ZthJC(D, tav) = Transient ther
