IRFP4468PBF Datasheet - International Rectifier

IRFP4468PBF HEXFET Power MOSFET

PD -97134 IRFP4468PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 2.0m: 2.6m: 290A c 195A S G .

IRFP4468PBF Features

* Single Pulse BOTTOM 1% Duty Cycle ID = 180A 400 200 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for

IRFP4468PBF_InternationalRectifier.pdf