IRFP4468PBF Datasheet, mosfet equivalent, International Rectifier

PDF File Details

Part number: IRFP4468PBF

Manufacturer: International Rectifier

File Size: 317.93KB

Download: 📄 Datasheet

Description: HEXFET Power MOSFET

Datasheet Preview: IRFP4468PBF 📥 Download PDF (317.93KB)

IRFP4468PBF Features and benefits

3000 EAS, Single Pulse Avalanche Energy (mJ) 6.0 5.0 2500 ID 30A 41A BOTTOM 180A TOP 2000 Energy (μJ) 4.0 3.0 2.0 1.0 0.0 0 20 40 60 80 100 1500 1000 500 0 25 .

IRFP4468PBF Application

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S.

IRFP4468PBF Description

The IRFP4468PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by International Rectifier, which is part of the Infineon Technologies group. This particular component is designed for high-efficiency applications and is commonly used in various power management and conversion scenarios. ### Key Features: .

Image gallery

Page 2 of IRFP4468PBF Page 3 of IRFP4468PBF

TAGS

IRFP4468PBF
HEXFET
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRFP4468 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468,IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement m.

IRFP440 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFP440 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFP440 - Power MOSFET (International Rectifier)
.

IRFP440 - N-Channel Power MOSFET (Intersil Corporation)
IRFP440 Data Sheet July 1999 File Number 2089.3 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.

IRFP440 - Power MOSFET (Vishay Siliconix)
IRFP440, SiHFP440 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 3.

IRFP440A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance.

IRFP440A - Power MOSFET (Samsung)
     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,.

IRFP440B - 500V N-Channel MOSFET (Fairchild Semiconductor)
IRFP440B November 2001 IRFP440B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

IRFP440PBF - HEXFET Power MOSFET (International Rectifier)
PD - 95198 IRFP440PbF • Lead-Free www..com www.irf.com 1 4/27/04 IRFP440PbF 2 www.irf.com IRFP440PbF www.irf.com 3 IRFP440PbF .

IRFP440R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts