IRFP4468 - N-Channel MOSFET
IRFP4468 Features
* Static drain-source on-resistance: RDS(on)≤2.6mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMP
