Part number:
IRFP4468
Manufacturer:
INCHANGE
File Size:
239.85 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on)≤2.6mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMP
IRFP4468 Datasheet (239.85 KB)
IRFP4468
INCHANGE
239.85 KB
N-channel mosfet.
📁 Related Datasheet
IRFP4468 - 100V Power MOSFET
(Infineon)
Public
IRFP4468PbF Final datasheet
MOSFET
StrongIRFET™ Power MOSFET, 100 V
Features
• High Efficiency Synchronous Rectification in SMPS • Uninterrup.
IRFP4468PBF - HEXFET Power MOSFET
(International Rectifier)
PD -97134
IRFP4468PbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe.
IRFP4468PbF - 100V Power MOSFET
(Infineon)
Public
IRFP4468PbF Final datasheet
MOSFET
StrongIRFET™ Power MOSFET, 100 V
Features
• High Efficiency Synchronous Rectification in SMPS • Uninterrup.
IRFP440 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFP440
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFP440 - Power MOSFET
(International Rectifier)
.
IRFP440 - N-Channel Power MOSFET
(Intersil Corporation)
IRFP440
Data Sheet July 1999 File Number
2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field.
IRFP440 - Power MOSFET
(Vishay Siliconix)
IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 3.
IRFP440A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance.