Part number: IRFP440
Manufacturer: International Rectifier
File Size: 164.11KB
Download: 📄 Datasheet
Description: Power MOSFET
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IRFP440 - Power MOSFET
(Fairchild Semiconductor)
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IRFP440
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFP440 - N-Channel Power MOSFET
(Intersil Corporation)
IRFP440
Data Sheet July 1999 File Number
2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field.
IRFP440 - Power MOSFET
(Vishay Siliconix)
IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 3.
IRFP440A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance.
IRFP440A - Power MOSFET
(Samsung)
)($785(6
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IRFP440B - 500V N-Channel MOSFET
(Fairchild Semiconductor)
IRFP440B
November 2001
IRFP440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFP440PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95198
IRFP440PbF
•
Lead-Free
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www.irf.com
1
4/27/04
IRFP440PbF
2
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IRFP440PbF
www.irf.com
3
IRFP440PbF
.
IRFP440R - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
:.
IRFP4410Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP4410Z，IIRFP4410Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.0mΩ ·Enhancement mode:
Vth =2.0 to 4.0 .
IRFP4410ZPBF - Power MOSFET
(International Rectifier)
PD - 97309A
IRFP4410ZPbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High .
