IRFP460LC Datasheet, transistor equivalent, Inchange Semiconductor

IRFP460LC Features

• Transistor
• Drain Current
    –ID= 20A@ TC=25℃
• Drain Source Voltage- : VDSS= 500V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)
• Fast

PDF File Details

Part number:

IRFP460LC

Manufacturer:

Inchange Semiconductor

File Size:

164.23kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

IRFP460LC Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current

TAGS

IRFP460LC

Inchange Semiconductor

📁 Related Datasheet

IRFP460LC - Power MOSFET (International Rectifier)
HEXFET® Power MOSFET PD - 9.1232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso.

IRFP460LC - Power MOSFET (Vishay Siliconix)
.vishay. IRFP460LC Vishay Siliconix Power MOSFET TO-247 S D G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qg.

IRFP460LCPBF - HEXFET Power MOSFET (International Rectifier)
PD - 94902 IRFP460LCPbF • Lead-Free .irf. 1 12/19/03 IRFP460LCPbF 2 .irf. IRFP460LCPbF .irf. 3 IRFP460LCPbF 4 .irf..

IRFP460 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St.

IRFP460 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFP460 - Power MOSFET (International Rectifier)
.

IRFP460 - N-Channel Power MOSFET (Intersil Corporation)
IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRFP460 - N-Channel Power MOSFET (ST Microelectronics)
IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s E.

IRFP460 - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St.

IRFP460 - Power MOSFET (Vishay)
.vishay. IRFP460 Vishay Siliconix Power MOSFET TO-247 D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qg.