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KSD5075T - Silicon NPN Power Transistor

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Part number KSD5075T
Manufacturer Inchange Semiconductor
File Size 129.08 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5075T Datasheet
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High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Electronic ballast applicaition High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage IC Collector Current- Continuous 6V 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 1

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