Datasheet Details
- Part number
- KSD5075T
- Manufacturer
- Inchange Semiconductor
- File Size
- 129.08 KB
- Datasheet
- KSD5075T-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
KSD5075T Description
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T .
High Breakdown Voltage-
: VCBO= 1500V (Min).
High Switching Speed.
High Reliability
APPLICATIONS.
Electronic ballast applicaition.
KSD5075T Applications
* Electronic ballast applicaition
* High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
IC Collector Current- Continuous
6V 3.5 A
ICP
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