KSD794 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD794 .
High Collector Current -IC= 3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min). Complement to Type KSB744 APPLICATIONS. D.

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Datasheet Specifications

Part number: KSD794
Manufacturer: Inchange Semiconductor
File Size: 130.70 KB
Datasheet: KSD794-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 3A ICP Collector Current-Pulse 5A IB Ba

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KSD794 Silicon NPN Power Transistor Inchange Semiconductor

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