KTC2200 Datasheet - Inchange Semiconductor

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KTC2200 Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot var.

KTC2200-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTC2200

Manufacturer:

Inchange Semiconductor

File Size:

218.71 KB

Description:

Silicon NPN Power Transistors

Applications

* Switching regulator applicaition.
* High voltage switching application.
* High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7

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KTC2200 Silicon NPN Power Transistors Inchange Semiconductor

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