KTC2201 Datasheet - Inchange Semiconductor

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KTC2201 Silicon NPN Power Transistors

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation APPLICATIONS. Switchin.

KTC2201-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTC2201

Manufacturer:

Inchange Semiconductor

File Size:

138.73 KB

Description:

Silicon NPN Power Transistors

Applications

* Switching regulator applicaition.
* High voltage switching application.
* High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V

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KTC2201 Silicon NPN Power Transistors Inchange Semiconductor

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