KTC2201 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTC2201 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation APPLICATIONS. Switchin.

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Datasheet Specifications

Part number: KTC2201
Manufacturer: Inchange Semiconductor
File Size: 138.73 KB
Datasheet: KTC2201-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching regulator applicaition.
* High voltage switching application.
* High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V

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KTC2201 Silicon NPN Power Transistors Inchange Semiconductor

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