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KTC2202 Silicon NPN Power Transistors

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number
KTC2202
Manufacturer
Inchange Semiconductor
File Size
210.70 KB
Datasheet
KTC2202-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

Applications

* Switching regulator applicaition.
* High voltage switching application.
* High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7

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