KTC4370A Datasheet - Inchange Semiconductor

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KTC4370A Silicon NPN Power Transistors

isc Silicon NPN Power Transistor KTC4370A .
High Collector-Emitter Breakdown Voltage VCEO= 180V(Min). Complement to Type KTA1659A. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Details

Part number:

KTC4370A

Manufacturer:

Inchange Semiconductor

File Size:

216.20 KB

Description:

Silicon NPN Power Transistors

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector

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