KTC4370A Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor KTC4370A .
High Collector-Emitter Breakdown Voltage VCEO= 180V(Min). Complement to Type KTA1659A. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: KTC4370A
Manufacturer: Inchange Semiconductor
File Size: 216.20 KB
Datasheet: KTC4370A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector

KTC4370A Distributors

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KTC4370A Silicon NPN Power Transistors Inchange Semiconductor

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