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KTC4370A - Silicon NPN Power Transistors

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Part number KTC4370A
Manufacturer Inchange Semiconductor
File Size 216.20 KB
Description Silicon NPN Power Transistors
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Description

High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) Complement to Type KTA1659A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Po

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