KTC4370 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage VCEO= 160V(Min). Complement to Type KTA1659. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: KTC4370
Manufacturer: Inchange Semiconductor
File Size: 217.93 KB
Datasheet: KTC4370-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector

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KTC4370 Silicon NPN Power Transistors Inchange Semiconductor

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