KTC4419 Datasheet - Inchange Semiconductor

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KTC4419 Silicon NPN Power Transistors

isc Silicon NPN Power Transistor KTC4419 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

KTC4419-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTC4419

Manufacturer:

Inchange Semiconductor

File Size:

211.24 KB

Description:

Silicon NPN Power Transistors

Applications

* Switching regulator applications
* High voltage switching applications
* High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7

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KTC4419 Silicon NPN Power Transistors Inchange Semiconductor

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