KTC4419 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor KTC4419 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: KTC4419
Manufacturer: Inchange Semiconductor
File Size: 211.24 KB
Datasheet: KTC4419-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching regulator applications
* High voltage switching applications
* High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7

KTC4419 Distributors

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KTC4419 Silicon NPN Power Transistors Inchange Semiconductor

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