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KTC4419 - Silicon NPN Power Transistors

KTC4419 Description

isc Silicon NPN Power Transistor KTC4419 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

KTC4419 Applications

* Switching regulator applications
* High voltage switching applications
* High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7

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Datasheet Details

Part number
KTC4419
Manufacturer
Inchange Semiconductor
File Size
211.24 KB
Datasheet
KTC4419-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor KTC4419-like datasheet