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KTC2800 - Silicon NPN Power Transistors

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Part number KTC2800
Manufacturer Inchange Semiconductor
File Size 210.79 KB
Description Silicon NPN Power Transistors
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Description

High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) Complement to Type KTA1700 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 1.5 A IB Base Current Collector Power Dissipation @T

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