KTD3055 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTD3055 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Complement to Type KTB2955 APPLICATIONS. High power amplifier applications.

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Datasheet Specifications

Part number: KTD3055
Manufacturer: Inchange Semiconductor
File Size: 143.62 KB
Datasheet: KTD3055-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* High power amplifier applications
* Recommended for 30~35W audio frequency amplifier output stage application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Col

KTD3055 Distributors

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KTD3055 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD3055-like datasheet