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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3060
FEATURES ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Case: TO-220 package ·Mounting position: Any
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
VRMS Maximum RMS Voltage
VDC
Maximum DC Blocking Voltage
60
V
42
V
60
V
IF(AV) IFSM TJ
Average Rectified Forward Current
30
A
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load 300
A
(JEDEC method)
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.