MBR3050CT thru MBR3060CT High Tjm Low IRRM Schottky Barrier Diodes C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR3050CT 50 35 50 MBR3060CT 60 42 60 Dimensions TO-220AB Dim.
A B C D E F G H J K M N Q R Inches Min.
Max.
0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min.
Max.
12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85
MBR3060CT Features
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free whelling, and polarity protection
Datasheet Details
MBR3060CT, MBR3050CT
SIRECTIFIER
97.11 KB
Schottky barrier diode.
This datasheet PDF includes multiple part numbers: MBR3060CT, MBR3050CT.
Please refer to the document for exact specifications by model.
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